| 摘要 |
PURPOSE:To make it possible to obtain a crystal layer having good crystallinity, by providing surface smoothness of a semiconductor substrate different from that of a covering single crystal plate in the liquid-phase epitaxial growth method of a compound semiconductor layer. CONSTITUTION:The surface of a semiconductor crystal substrate 4 is covered with a cover single crystal plate 6 in a process for allowing the semiconductor before the liquid-phase growth at a high temperature to carry out the liquid- phase epitaxial growth of the compound semiconductor layer. In the method, surface smoothness of the semiconductor crystal substrate 4 is different from that of the cover single crystal plate 6. For example, if the surface smoothness of the cover single crystal plate 6 is worse than that of the substrate crystal 4. Thus, the amount of an element of Group V reaching the substrate crystal 4 is reduced, and the deposition rate of the element of Group V differs to reduce the deposition of the element of Group V on the substrate crystal 4. The cleanness of the substrate crystal 4 is kept just before the growth of the semiconductor layer, and the aimed crystal of good quality can be grown. |
