| 摘要 |
PURPOSE:To prevent adverse effect on the element characteristic by performing exposure by an ion beam the penetration depth of which is shorter than the resist thickness, developing an baking, and thereafter completely removing the resist remaining in he pattern portions by dry etching, thereby preventing the ion beam from reaching the substrate. CONSTITUTION:A PMMA resist film 2 is subjected to spin coating on a semiconductor substrate 1, and baking is performed. Then, when a bundled berylium ion beam is applied to the portions on which a pattern is selectively formed, the portions of the resist film 2 to which the ion beam was applied are exposed. Application of the bundled berylium ion beam is performed while it is bi- dimensionally controlled via computer control. Then, when development is performed, the exposed resist fuses, and resist patterns 15 are formed. Since the penetration depth of ions 4 is on the order of 1.1mum, the ions 4 do not reach the substrate 1. Therefore, the configuration of the resist patterns to be formed has about 0.2mum of resist remaining in the bottom of the patterns 15. When RIE is performed, the resist is uniformly removed, and resist patterns 25 having a cross-sectional shape are obtained. |
