| 摘要 |
PURPOSE:To obtain the IIL of low consumed power by improving the factor of injector current utilization, by a method wherein p-type regions serving as the injector are formed as two p-type regions isolated from each other, and an injector electrode is provided across these two p-type regions, so as to cover therebetween. CONSTITUTION:A p<-> type Si substrate 11 is provided with an n<+> type buried layer 12 serving as the emitter of a multicollector transistor, an n<-> type epitaxial layer 13 grown on the substrate 11, a p-type diffused layer 14 serving as the base of the multicollector transistor, and a plurality of shallow n<+> type diffused layers 15 serving as multicollectors. Window holes are bored in an Si oxide film 18, these regions are provided with electrodes 19, 20 made of aluminum evaporated films by low-resistant connection. Among these the elec trode 20 connected to p-type diffused layers 16, 17 is provided across them so as to cover therebetween. |
