| 摘要 |
<p>PURPOSE:To facilitate the formation of resistors so as to make connection of large tensile strength by a method wherein the base-emitter resistor is formed by using a connection semiconductor region, and emitter lead connection parts are provided outside the emitter region; then, leads are connected on the semiconductor. CONSTITUTION:A connection semiconductor region 15 is isolated by insulation from a base region 13 with a collector high-resistant region 12 at the part other than a joint with a resistor semiconductor region 16. They are therefore connected by resistance with the region 16 which acts as a resistance region because of being narrow. Said region 16 of P-type acts as a bias resistor or a stabilizing resistor. A region 13a is the part where bonding pads for base leads are formed. Said region 15 of P-type for emitter lead bonding and the region 13a for base lead bonding are provided at the corners on a diagonal of the planar square surface of a substrate 11.</p> |
