| 摘要 |
PURPOSE:To form fine element-isolating regions without generating crystal detects in the epitaxial layer, by a method wherein an Si single crystal epitaxial layer is grown on an Si oxide film, which film is then removed, and the region of removal is filled with an insulation film. CONSTITUTION:An Si oxide film 21 pattern is formed on an Si semiconductor substrate 11. Next, when an Si single crystal epitaxial layer 23 is grown on the formed Si oxide film 21 and the semiconductor substrate 11, the single crystal Si layer 23 is formed at the region where the substrate 11 is exposed, and a polycrystalline Si film 24 at the region where the oxide film 21 is formed. The polycrystalline Si 24 is removed by an etching method having large, different speeds. An Si groove is filled up with an Si oxide film 25, thus flattening the surface. After formation of an Si oxide film 26, a polycrystalline Si film 27 is so formes as to fill up the Si groove, and is flattened. The surface of the Si film 27 is oxidized again into an Si oxide film 28, resulting in the formation of an element isolation. |
