| 摘要 |
PURPOSE:To have high potential holding power and electrostatic charging power without generating residual potential and to obviate the generation of dielectric breakdown owing to developing bias by laminating the 1st charge implantation preventive agent consisting of amorphous silicon nitride and the 2nd charge implantation preventive agent layer consisting of amorphous silicon nitride on a conductive base in this order from the base side. CONSTITUTION:The 1st charge implantation preventive layer 2 consisting of the amorphous silicon nitride contg. either of the group IIIa element or group Va element of periodic table in a >=1X10<-4>-<=1.0atomic% is laminated on the conductive base 1. The 2nd charge implantation preventive layer 3 consisting of the amorphous silicon nitride contg. either of the group IIIa element or group Va element of periodic table in a >=1X10<-8>-<=1X10<-4>atomic% is laminated on the layer 2 to the film thickness ranging >=5-<=40Xm. A photoconductive layer 4 consisting of amorphous silicon is laminated on the layer 3 to the film thickness ranging >=0.5mum-<=5mum. |
