| 摘要 |
PURPOSE:To improve the coverage property of a wiring film and eliminate step disconnection by having a metal silicide film on the silicon substrate in the bottom of a contact hole, forming an electrically conductive side wall having a gently sloped side face along the inside of the contact hole, and depositing and filling a wiring material to construct a wiring film. CONSTITUTION:A device isolation and insulation film 11 is formed on a P-type silicon substrate 10 to fine a device region, and a DRAM memory device 12 is constructed. As to the contact, a PtSi film 23 is thinly formed on the surface of an impurity layer 18 on the bottom portion of a control hole 21, and a side wall 24 having a gently sloped side face is formed on the inner surface of the contact hole 21 so as to cover each end portion of the platinum silicide film 23. WSi2 is used for this side wall 24, Then, an AL wiring film 22 as the data line is formed so that one end thereof penetrates into the contact hole 21, thereby making contact with the impurity layer 18 through the platinum silicide film 23. |
