| 摘要 |
PURPOSE:To optimize the process parameters such as wafer insertion and drawing out speeds and tube wall temperature distribution by performing the execution of a process simulation by applying a high-speed calculation method by tabulation to a physical model for determining the wafer temperature representing a thermal phenomenon in the reaction tube and the calculation of the radiation heat from the tube wall. CONSTITUTION:The tube wall temperature is observed by a temperature measuring device 106 when a wafer 104 is inserted into or drawn out from a reaction tube 101, and is taken into a control portion 110. This observed data is further accumulated in a device 2 for gathering measured data of the reaction tube wall temperature distribution. On the supposition that the reaction tube is a constant-temperature heat source, the experiment result for the tube temperature change with time is observed by the temperature measuring device 106 as necessary, and this data is taken in from the device 2 for gathering measured data of the reacting tube temperature distribution. With this, a thermal phenomenon in the reaction tube is constructed by a physical model for determining the wafer temperature which ensures a precision equal to practical use, and the calculation of the radiation heat from the tube wall occupying the most part of the calculation time is performed by application of a high- speed calculation method by tabulation. |
