| 摘要 |
PURPOSE:To execute plasma ashing while prohibiting a substrate to receive ion bombardment by disposing a hollow metallic mesh on a cathode electrode of a plasma ash at the same potential as the potential of the electrode and disposing the substrate to the inside of the mesh. CONSTITUTION:The metallic mesh 7 is disposed on the cathode electrode 5 on the lower side of a capacity coupling type high-frequency plasma device so as to cover the substrate 7 and is electrically connected to the lower electrode 5. The inside of a vacuum chamber 1 is evacuated to a high vacuum by an evacuation system 2 and gaseous oxygen is introduced from a gas introducing system 3 into the chamber 1. The inside of the chamber 1 is maintained under the prescribed pressure. Electric discharge is executed between the electrodes 4 and 5 by a high-frequency power source 6 so that an org. material covering the thin film on the substrate 7 is plasma-ashed. Since the mesh 8 is at the same potential as the potential of the lower electrode 5, the self-bias in the plasma is not applied on the substrate 7 and the ions are removed by the mesh 8. The reaction by only the active seed is thus affected and only the plasma ashing is executed on the substrate 7 without receiving the ion bombardment.
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