| 摘要 |
PURPOSE:To completely cover the edge part of a stepped section so as to form a minute pattern, by applying a high-viscosity photoresist after a low-viscosity photoresist is formed on the upper surface of the stepped section. CONSTITUTION:When a photoresist 2 is formed by applying a low-viscosity nega-resist on a semiconductor wafer 1 having a stepped section and, after a minute pattern 5 is formed on the stepped section, a high-viscosity photoresist 6 is applied, edge parts 4 are sufficiently covered. Then a rough pattern 7 which is sufficiently larger than the pattern 5 but does not reach the edge parts 4 is formed. Therefore, a minute pattern can be formed on a stepped section by using two kinds of photoresists having different viscosity and photosensitivities, and the edge parts of the stepped section can be covered sufficiently. |
