| 摘要 |
PURPOSE:To form concavities of the same depth irrespective of the of a sectional area of a concavity to be formed, by applying inactive ion beams to a layer of a substance to be processed, so as to facilitate etching. CONSTITUTION:A mask material 2 is connected on the surface of a layer 1 of a substance to be processed, and holes 3 and 4 of desired patterns having widths w3 and w4 respectively are formed. Subsequently, an apparatus is employed in which etching can be conducted while inactive ion beams 7 are applied by an ion beam generator. Then, first portions 8 and 9 in which inactive ion beams are injected are formed, and further concavities 10 and 11 are formed by applying etching to the layer 1 of the material to be processed. Thereafter the mask material 2 is removed, and thereby the formation of the desired patterns is completed. According to this method, the portions 8 and 9 of the layer 1, which are formed by the application of the inactive ion beams 7, are turned to be easy to etch, and thus etching can be executed consecutively even when reactive seeds are sparce in an opening of small area. |
