| 摘要 |
<p>PURPOSE:To decrease considerably the process for production by laminating successively an amorphous silicon layer (p layer), amorphous silicon layer (i layer) and amorphous silicon layer (n layer) between a line electrode and cell electrode thereby forming a non-linear means. CONSTITUTION:The non-linear device is a back-to-back diode (BTBD). The p-type a-Si layer 104, i-type a-Si layer 105, n-type a-Si layer 106 and a-Si:G layer 107 are successively formed between the line electrode 103 and cell electrode 102 consisting of ITO formed on an insulating substrate 101. The thickness of the p-type a-Si layer 104 is 100-300Angstrom , the ratio of the II-b group element of periodic table with Si element is 1X10<-4>-5X10<-3> and the thickness of the i-type a-Si layer 105 is 500-2,000Angstrom . The ITO and two times of photolithographic stages of the a-Si part are just required to form the non-linear element and the process for production is extremely short and simple.</p> |
