发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PURPOSE:To improve a manufacture yield by eliminating possibility of the structural and electrical contact between adjacent elements in a light emitting element array by forming an insulating film between a metallic electrode and a metallic shield film. CONSTITUTION:Plural openings 2 are arranged on a substrate and subsequently a diffusion region 3 is formed. A limited range of the openings 2 is made an ohmic contact part and a metallic electrode 4 extending on a diffusion preventing layer 1 is arranged directly as a bias voltage supply part. An insulating film 5 covering the diffusion preventing layer 1, the openings 2 and the metallic electrode 4 is formed. A metallic shield film 6 is formed in a limited range of the insulating film. The metallic electrode 4 and the metallic shield film 6 formed by the above process do not interfere each other structurally and electrically even if those overlap mutually by the plane view. Accordingly it is possible to design the size of the metallic electrode 4 and the metallic shield film 6 widely in lateral direction.
申请公布号 JPS61176173(A) 申请公布日期 1986.08.07
申请号 JP19850017353 申请日期 1985.01.31
申请人 NEC CORP 发明人 KOSHIMURA TSUTOMU
分类号 H01L27/15;H01L33/08;H01L33/30;H01L33/36;H01L33/44 主分类号 H01L27/15
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