| 摘要 |
In order to fabricate galvanic patterns in the sub- mu m region, the electron beam-sensitive resist pattern (7, 7a) is generated on a layer system consisting of the combination of a first thin metal layer (6) which back-scatters electrons strongly, and therebelow a second metal layer (5) which back-scatters electrons weakly and can be converted into a metal oxide during etching. Between this layer sequence (6, 5), which preferably comprises gold and aluminium, and the plating layer (3) provided on the substrate (1) for the subsequent plating step, there is a polyimide layer (4) as an interlayer and electroplating mask. By employing this layer sequence (4, 5, 6, 7) it is possible to fabricate sub- mu m patterns having vertical flank slopes and high aspect ratios (up to 8:1). The process is used for fabricating masks in microelectronics, especially X-ray absorber masks. <IMAGE> |
