发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent any defective contact between upper and lower layer wiring films by a method wherein the first and the second insulating films are successively formed on the surface of substrate coated with a wiring film while a hole with slant on inner periphery tapering toward bottom is formed on the part of another wiring film on the second insulating film. CONSTITUTION:After forming a lower layer wiring film 3, a fluid insulating 5 (the first insulating film) is formed on a substrate 1 and then another insulating film 6 (the second insulating film) is formed on the fluid insulating film 5 and after forming a contact hole 8 with slant on inner periphery on said films 5, 6, an upper layer wiring film 9 is formed. The fluid insulating film 5 flattens a basic layer of the upper wiring film 9 to reduce the irregularities due to step difference of the lower layer wiring film 3 preventing any step disconnection at the intersection of upper layer wiring film 9 with the lower wiring film 3 from occuring. In such a constitution, the contact hole 8 may prevent the step disconnection of upper layer wiring film 9 at the hole 8 from occuring since the other insulating film 6 is formed on the fluid insulating film 5 for surface flattening while the slant on inner periphery is remarkable.
申请公布号 JPS61176138(A) 申请公布日期 1986.08.07
申请号 JP19850017544 申请日期 1985.01.31
申请人 SONY CORP 发明人 UEKI YOSHIO
分类号 H01L21/768;(IPC1-7):H01L21/88 主分类号 H01L21/768
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