| 摘要 |
PURPOSE:To obtain enhanced non-linear characteristics even at room temperature by employing a composition in which there is a difference in energy between band gaps of the second and third semiconductor layers. CONSTITUTION:The unsymmetry of potential barriers 1 and 2 can be obtained by changing a value of x in AlxGa1-xAs. For example, when the values of x of the barrier layers 1 and 2 are selected to be 0.6 and 0.3 respectively, a height of the potential barrier becomes high on the AlGaAs layer 1 and low on the layer 2. Three layers of the potential barrier layers 1 and 2, and a potential well layer 3 are grown to a thickness of 50-70Angstrom respectively on the GaAs layer 4 doped with an impurity which is to be an electrode layer by an MBE method. Further on those, either of the GaAs electrode layers 5 which is doped with an impurity similarly is formed thereby forming an element part. The negative and positive voltage V are applied to the left electrode layer 4 and the right electrode layer 5 respectively and the effective unsymmetry of the barriers is enhanced as shown by the drawing. |
