| 摘要 |
PURPOSE:To obtain a high-gate withstand voltage and highly reliable MOSFET by a method wherein nitrogen gas or oxygen gas is mixed into an inactive gas to be used when a sputtering is performed on a high-melting point metal target. CONSTITUTION:As a high-melting point metal target to be used for performing a sputtering is used a high-melting point metal target made of such metals as titanium, tantalum, morybdenum, tungsten and so forth, a silicon substrate 1, whereon a silicon dioxide film 2 is coated, is disposed in opposition to a high-melting point metal target 3 made of these high-melting point metals and the sputtering is performed. In this case, the pressure of the argon gas to make the sputtering perform is set at 0.5 mmTorr-5mmTorr, and nitrogen gas or oxygen gas is mixed into the argon gas at a ratio of 0.05mmTorr-0.5mmTorr equivalent to 1-10% of the argon gas. The high-melting point metal target 3 is coated on the gate electrode region in such a way, whereby the oxygen or nitrogen gas intrudes in between the lattices of the high- melting point metals or a substitution of the metal molecules to fly out from the target is performed in a process, wherein the high-melting point metal target goes to be sputtered, the lattice arrangement of the high-melting point metals becomes irregular and these high-melting point metals are prevented from intruding or being diffused in the silicon dioxide film. |
