| 摘要 |
PURPOSE:To obtain a LD provided with a monolithic monitor in which there is no deterioration in laser performances such as a decline of laser output or a change with aging by providing a light accepting element in vertical direction of an active layer through a semiconductor layer whose forbidden band layer is larger than the active layer. CONSTITUTION:A light accepting element is arranged in vertical direction of an active layer 14 through a semiconductor layer 13 whose forbidden band is larger than the active layer 14. For example, on the p-GaAs substrate 11 which is to be p-layer of an PIN diode, an n-GaAs layer 12 of an i-layer of the PIN diode, an n-AlGaAs layer 13 which is to be a clad layer of an LD using an n-layer of the PIN diode commonly, an undoped GaAs layer 14 as an active layer of the LD whose thickness is 2,000Angstrom or under, a p-AlGaAs layer 15 of a clad layer of the LD, a stripe diffusion layer (Zn)16 of the LD, an Au/Zn/Au layer 17 of p-electrode of the PIN diode, an Au/AuGe layer 18 of n-electrode used commonly by the LD and PIN diode, an Au/AuZn layer 19 of p-electrode of the LD and PIN diode are arranged thereby composing the LD provided with a monolithic monitor. |
