| 摘要 |
PURPOSE:To easily obtain a high voltage resistive IC separated by a dielectric by growing a semiconductor layer on a semiconductor substrate surface, providing a plurality of circuit components on the above surface, covering the whole surface with a dielectric film, boring a groove for surrounding individual elements up to the dielectric film from the rear side, filling the dielectric in the groove and connecting island-shaped regions. CONSTITUTION:An N<++> type layer 11 and an N-type layer 12 are laminated on an N-type Si substrate 10 to make them epitaxially grow. Thus, P-type regions 14a and 14b and an N<+> type region 15a positioning in the region 14b are diffused and formed on a surface layer portion of a layer 12 respectively. Next, these regions are surrounded by an N<+> type region 15b to form individual circuits. After this, the whole surface of them is covered with a dielectric film 13. The coated side is stuck to a polishing block 16 and the rear face of the substrate 10 is polished to leave a slight portion of the substrate 10, cover it with a mask 17 and bore a V-shaped groove 18 surrounding one set of circuits up to a film 13. Next, removing the mask 17 and plugging the groove 18 with a dielectric member, island-shaped individual circuits are connected by the dielectric member. |
