| 发明名称 |
A SEMICONDUCTOR DEVICE COMPRISING AN ELECTRODE AND/OR AN INTERCONNECTION |
| 摘要 |
A semiconductor device comprising an electrode or interconnection made of an insulator film (2), a tungsten film (3) and a phosphosilicate glass film (4) which are stacked and formed on a semiconductor substrate (1). Canneling attributed to the punch-through of ions during ion implantation and fluctuations in the threshold voltage can be effectively prevented, so that the semiconductor device has stable characteristics. |
| 申请公布号 |
EP0108251(A3) |
申请公布日期 |
1986.08.06 |
| 申请号 |
EP19830109921 |
申请日期 |
1983.10.04 |
| 申请人 |
HITACHI, LTD. |
发明人 |
KOBAYASHI, NOBUYOSHI;IWATA, SEIICHI;YAMAMOTO, NAOKI |
| 分类号 |
H01L21/3205;H01L21/28;H01L23/29;H01L23/31;H01L23/52;H01L23/532;H01L29/43;H01L29/49;(IPC1-7):H01L23/52;H01L23/28;H01L29/62 |
主分类号 |
H01L21/3205 |
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