| 摘要 |
PURPOSE:To make the channel width and the carrier concentration properly adjustable, by successively laminating three undoped epitaxial layers on a semi- insulating semiconductor substrate and further providing electrodes of gate, source, and drain on the top layer. CONSTITUTION:A semi-insulating semiconductor substrate 11 is successively laminated with three types of undoped layers: 12, 13, 14, being all epitaxially grown and composed of AlxGa1-xAs, Aly1Ga1-y1As and Aly2Ga1-y2As respectively, and N-type AlxGa1-xAs layer 15 to supply electrodes, to which a gate 16, a source 17 and a drain 18 are provided. A semiconductor devide thus constructed has no sharp variation of energy band to allow little variation of electronic potential due to the special variation of the interface. By altering values of y1 and y2, various kinds of band structures are freely obtained to provide any channel structure 20 and to properly set the value of concentration and current in the channel 20. |
