| 摘要 |
PURPOSE:To simplify processes, by burying the surrounding part of the first superconducting wiring layer pattern by an insulating layer, making the first superconducting layer to be an insulating film, and blocking a tunnel current between the first superconducting layer and the second superconducting layer. CONSTITUTION:A lower superconducting niobium film, which is patterned and surrounded by SiO2 3, is formed in contact with an Si substrate 1. RF plasma oxidation is performed, and an interlayer insulating film 4 comprising a niobium oxide film having a specified thickness is formed. Thereafter, an upper super conducting niobium film 5 is provided. As a result, the upper superconducting layer is formed through the interlayer insulating film, which is formed in the embedded lower superconducting layer by self-alignment. Thus a multilayer structure is implemented. In this method, the processes can be simplified, estimat ing allowance is not required and the device can be made compact. |
