| 摘要 |
PURPOSE:To prevent the deterioration in mobility, and to improve reliability by forming gate electrodes, whose word functions are specified, to an N well and a P well having gentle impurity profiles in impurity peak concentration formed to the surface of a semiconductor substrate through gate oxide films. CONSTITUTION:A P well 22 and an N well 23, the peak values of an impurity therein have 1X10<17>cm<-3> or more and which have gentle impurity profiles, are shaped to a P<-> type Si substrate 21. Element isolation regions 24 are formed onto the surface of the substrate 21, gate oxide films 25 are shaped into element forming regions, a polycrystalline silicon film is applied onto the whole surface, a P-type impority is introduced, and gate electrodes 26 having work functions larger than, 4.15eV are shaped through photoetching. N<+> type source-drain regions 27, 28 and a wiring layer 29 in an N channel MOS transistor and P<+> type source-drain regions 30, 31 and a wiring layer 32 in a P channel MOS transistor to the N-type well 23 are formed. Contact holes 34 are bored to an oxide film 33 for protection, and wiring patterns 35 are formed. |
