| 摘要 |
PURPOSE:To obtain the etching conditions having good uniformity by satisfying the relation, R=-AG+R0 when the distance to the circumference from the center of many gas injection holes provided to the upper electrode forming a dry etching apparatus is considered as R, redius of material to be etched as R0, the distance between the upper and lower electrodese as G and a constant as A. CONSTITUTION:An etching chamber 11 is formed with a vacuum vessel 10 being grounded where a heater coil 21 is wound around the circumferential wall and a gas exhaustion hole 19 is provided at the bottom, and the parallel and flat upper electrode 12 and the lower electrode 13 are arranged within such chamber. In such a structure, a plurality of etching gas injection holes 18 are bored to the lower surface of upper electrode 12, the gas sent from the supply pipe 17 is fed thereto, the lower electrode 13 having a cooling water exchange port 20 is connected to a high frequency power supply 16 through a matching network 15 and a material 14 to be etched is placed on the electrode 13. With such structure, a constant A explained above is calculated from the equation, A=(R0-R)/G, and this equation satisfies said relation. Thereby, the etching can be done effectively even when sizes are changed. |
