| 摘要 |
PURPOSE:To realize an IC of higher performance with its charactetistics improved by a method wherein the entire surface of an oxide film is covered by an nitride film and an electrode. CONSTITUTION:An oxide film 2 is formed on the entire surface of an Si substrate 1, to be followed by the formation of a nitride film 3. A desired pattern of a photoresist 4 is provided by application on the nitride film 3, and the photoresist 4 serves as a mask in a process wherein the nitride film 3 is subjected to plasma etching or the like for provision of an opening 5. The photoresist 4 is then removed, another photoresist 6 is provided application, patterning is accomplished to affect the opening 5 well into its depth. Another opening 7 is formed inside the opening 5 with the patterned photoresist 6 serving as a mask, for the provision of an electrode contact window 8. The photoresist 6 is removed, and then an electrode 9 is built in the electrode contact window 8. This results in a semiconductor device A, with its entirety covered by the electrode 9 and nitride film 3, which does not allow any portion of the oxide film 2 to be exposed on the surface. |
