发明名称 SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
摘要 PURPOSE:To enable the sufficient connection of a periodical structure with an electromagnetic wave by a method wherein part of the width of at least one of an active layer and layers in close vicinity to the active layer is varied periodically in a buried type DFB laser. CONSTITUTION:SiO2 7 is deposited on a multiple grown layer formed by laying guide layer 2, an active layer 3, a buffer layer 4, a clad layer 5 and a cap layer 6 on a substrate 1. Next, a grating is formed in SiO2 7 so that the cap layer 6 is exposed in an indented portion of the etching grating of SiO2 7, and subsequently, a photoresist 8 having a uniform stripe width being used as a second mask, an oxide film 7 is etched obliquely by dry etching. This etched film 7 being used as an etching mask, the multiple grown layer is etched so that the width of the stripe-shaped multiple grown layer is made to have a periodical structure. Then, the layer is buried with a material having an appropriate refractive index, and thus a buried DFB laser of a refractive index waveguide type is prepared. By this method, periodical variation of a large refractive index can be realized, and a stable state of a uniaxial mode can be obtained.
申请公布号 JPS61174684(A) 申请公布日期 1986.08.06
申请号 JP19850014232 申请日期 1985.01.30
申请人 HITACHI LTD 发明人 NAKAMURA HITOSHI;TSUJI SHINJI;MATSUMURA HIROYOSHI;KAYANE NAOKI;OISHI AKIO
分类号 H01S5/00;H01S5/12;H01S5/227 主分类号 H01S5/00
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