| 摘要 |
PURPOSE:To reduce parasitic capacity between electrodes by building up a second oxide film on a first oxide film covering an electrode, applying anisotropic etching thereto and leaving the second oxide film on the side wall of the oxide film. CONSTITUTION:On an Si substrate 11 is provided an oxide film 12, an which a poly-crystal Si film 13 is formed. Next, impurities are diffused into the film 13, which is etched by a photoetching method. The film is oxidized in a vapor containing atomosphere and etched to form an oxide film 15. Furthermore, an oxide film 16 is built up on the film 15 subjected to anisotropic etching to leave the film 16 on the side wall of the film 15. In this way, an oxide film having a proper thickness is formed on the upper part and the side wall of the film 13, thereby reducing parasitic capacity between electrodes and enhancing dielectric strength therebetween. |
