| 摘要 |
PURPOSE:To realize uniform heating of a substrate, to reduce dislocation of crystal and to improve quality of vapor growth film by transmitting heat of susceptor to a substrate to be grown by the vapor growth method through a substances having a heat conductivity which is lower than that of susceptor and a specific resistance which is higher than that of susceptor. CONSTITUTION:A susceptor 3 is formed like a disk by graphite used as the principal material and the setting plates 5 made of quartz, Si, etc. having the heat conductivity lower than that of graphite and the specific resistance larger than that of graphite are buried in the area equal to or larger than the semiconductor substrate 4 at the region where the semiconductor substrate 4 may be set. The susceptor 3 is heated by applying power to a coil 6 and the semiconductor substrate 4 is heated from the lower side with the heat conducted through the setting plates 5. Meanwhile, the substrate 4 is heated from both upper side and circumference thereof by reflecting the radiated heat from the susceptor 3 with the reflecting material 7. Amounts of incoming heat from the upper surface and circumference are balanced by reducing amount of incoming heat from the lower surface of substrate 4 through the setting plates 5 and thereby uniform heating is carried out. Quality of vapor growth film is thus improved. |
