发明名称 |
Fluorinated p-doped microcrystalline semiconductor alloys and method of preparation. |
摘要 |
<p>A fluorinated, boron-doped p-type silicon-based semiconductor microcrystalline alloy containing a sufficient concentration of crystalline inclusions to improve material properties substantially and a method of preparing the alloy. Single and multiple cell photovoltaic devices including the alloy in at least one layer exposed to incoming light have improved fill factors and efficiencies.</p> |
申请公布号 |
EP0189636(A1) |
申请公布日期 |
1986.08.06 |
申请号 |
EP19850307162 |
申请日期 |
1985.10.07 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
GUHA, SUBHENDU;KULMAN, JAMES;OVSHINSKY, STANFORD R. |
分类号 |
H01L31/04;C23C16/22;H01L21/205;H01L29/04;H01L31/0368;H01L31/075;H01L31/20;(IPC1-7):H01L21/205;H01L31/02 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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