发明名称 Fluorinated p-doped microcrystalline semiconductor alloys and method of preparation.
摘要 <p>A fluorinated, boron-doped p-type silicon-based semiconductor microcrystalline alloy containing a sufficient concentration of crystalline inclusions to improve material properties substantially and a method of preparing the alloy. Single and multiple cell photovoltaic devices including the alloy in at least one layer exposed to incoming light have improved fill factors and efficiencies.</p>
申请公布号 EP0189636(A1) 申请公布日期 1986.08.06
申请号 EP19850307162 申请日期 1985.10.07
申请人 ENERGY CONVERSION DEVICES, INC. 发明人 GUHA, SUBHENDU;KULMAN, JAMES;OVSHINSKY, STANFORD R.
分类号 H01L31/04;C23C16/22;H01L21/205;H01L29/04;H01L31/0368;H01L31/075;H01L31/20;(IPC1-7):H01L21/205;H01L31/02 主分类号 H01L31/04
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