METHOD OF PRODUCING SINGLE CRYSTAL FILM

摘要

The invention provides a method of forming a single crystal film on the surface of an insulating film. The method involves forming an amorphous or polycrystalline film on the exposed surfaces of a single crystal substrate and an insulating film, in an ultra-high vacuum. The product is then heat treated so that the film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.