发明名称 Semiconductor memory
摘要 YA semiconductor memory is provided with memory cells for storing a plurality of sets of data, each of the sets having check bits. A selecting circuit selects some of the memory cells to form a set in response to a first address signal. The circuit includes an error correcting code circuit, a tristate circuit and a control circuit which forms a control signal to control the tristate circuit. Output terminals of the tristate circuit are coupled with external output terminals of the semiconductor memory. Also, the tristate circuit is controlled by the control signal to bring the external circuit terminals into high impedance at least during the time when the error correcting code circuit is delivering indefinite data.
申请公布号 US4604749(A) 申请公布日期 1986.08.05
申请号 US19830502636 申请日期 1983.06.09
申请人 HITACHI, LTD.;HITACHI MICROCOMPUTER ENGINEERING LTD. 发明人 SHINODA, TAKASHI;SAKAI, KIKUO;OGATA, MASAHIRO;KAWAMOTO, HIROSHI;ONISHI, DECEASED, YOSHIAKI;ONISHI, ADMINISTRATRIX, JUNKO
分类号 G06F11/10;G11C17/08;(IPC1-7):G06F11/10 主分类号 G06F11/10
代理机构 代理人
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