| 摘要 |
A baffle for use in achieving a substantially isotropic grain structure in a crystalline layer which is sputtered onto a substrate by moving the substrate linearly, and without rotation, in a front-to-back direction below a sputtering target. The baffle has front and back shields which are adapted to limit deposition of sputtered material onto the moving substrate substantially to substrate regions which directly underlie the target. A pair of strips in the baffle are constructed to effect substantially symmetrical sputtering of material onto the substrate surface from opposite target side directions, to produce an isotropic crystal structure during early phases of film deposition.
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