发明名称 |
Process of producing thick layers of silicon dioxide |
摘要 |
An improvement in the formation of thick, i.e. 1,200 nanometers and greater, layers of silicon dioxide on a substrate is provided. The silicon dioxide layer is provided by the alternate deposition and oxidation of thin layers of silicon. In comparison to conventional oxidation, the time required for formation of a thick layer of silicon dioxide in accordance with the disclosed process is substantially reduced.
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申请公布号 |
US4604304(A) |
申请公布日期 |
1986.08.05 |
申请号 |
US19850751680 |
申请日期 |
1985.07.03 |
申请人 |
RCA CORPORATION |
发明人 |
FARAONE, LORENZO;PATTERSON, DAVID L. |
分类号 |
C23C8/10;C23C16/40;H01L21/316;H01L21/321;(IPC1-7):C23C16/40 |
主分类号 |
C23C8/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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