| 摘要 |
PURPOSE:To obtain the title molecular beam source capable of controlling the composition of a compd. semiconductor with good reproducibility by displacing relatively a fixed plate and a movable plate constituting a shutter mechanism to control the opening area by the degree of alignment between both plates. CONSTITUTION:Al 3, for example, is packed into a high-purity BN crucible 2 provided in a heating furnace 1 as a vaporization source, and the periphery of the heating furnace 1 is covered with a cover 5 cooled with liquefied nitrogen. The temp. of the heating furnace 1 is measured by a thermocouple 4 in contact with the crucible 2, and controlled. A fixed plate 6 having a slit opening part 6a is provided to the opening part of the cover 5, and a movable plate 7 having a similar opening part 7a and which can be slid freely is superposed thereon to constitute a shutter mechanism. When the opening part position of the movable plate 7 is aligned with the opening part position of the fixed plate 6, the flux of Al becomes maximum, and the flux of Al becomes zero, when both opening parts are not aligned. The composition of a compd. semiconductor can be controlled optionally with good reproducibility by moving the movable plate 7 appropriately.
|
