| 摘要 |
PURPOSE:To enable the prevention of electrostatic breakdown without reducing the integration degree of semiconductor elements, by a method wherein an electrostatic breakdown prevention element is provided on the inner leads of IC. CONSTITUTION:The top of an electrostatic breakdown prevention element 81 is provided with terminals 82, which are connected to an annular member 61, 71, and the bottom with terminals 82, which are soldered to each inner lead 1, 2, 7, and 32, resulting in the construction of diodes D1, D2 of polarity as shown by the diagram. When an input signal Vin is supplied, a transistor Q sets in action; however, when its voltage level rises over a given voltage level, e.g. power source VCC by dash current or the like, the diode D1 turns on and discharges its current to the power source line. On the other hand, when the voltage level goes below the GND level, the diode D2 gets in ON-action and discharges its current to the earth line, resulting in the prevention of electrostatic breakdown of the semiconductor IC. |
