| 摘要 |
PURPOSE:To obtain the titled element having high-speed response and suitable for integration, by a method wherein a recess formed by selectively etching the semiconductor substrate surface with an insulation film is successively provided from the substrate side with the first conductivity type semiconductor layer and second conductivity type semiconductor layer of equal band gap and the second conductivity type semiconductor layer of larger band gap. CONSTITUTION:A specific part of an insulation film 8 covering semi-insulation InP substrate 1 is selectively removed through the resist process. Next, a recess is formed in the substrate 1 by selective etching with the insulation film 8. Thereafter, only the recess is successively provided from the substrate side selectively with a P<+> GaInAs layer 2, an N<-> GaInAs layer 3, and an N-InP layer 4 by crystal growth using the vapor phase growing method, with the insulation film 8 remaining. Here, the layer 2 is formed by Zn doping, and the layer 3 is contrived for decrease in concentration by the addition of a trace of oxygen besides the use of high-purity raw material gas and metal. The uppermost layer N-InP 4 can be controlled in concentration by growth-speed control through non-doping. |
