发明名称 METHOD AND DEVICE FOR REFORMING SURFACE LAYER OF WORK
摘要 PURPOSE:To reform efficiently the surface layer of a work including the inside wall surface of the deep hole of the work with a non-distortion treatment by irradiating an ion beam to a target and driving sputtering particles form the target toward the surface for vapor deposition of the work. CONSTITUTION:A driving and supporting device 60 is disposed in a vacuum chamber 10 provided with a vacuum pump 20 and an ion beam generator 3 to support the work 50 and the target 70 inserted into the hole part of the work 50 is held rotatably 62 and movably 61 in the axial direction to constitute a device for reforming the surface of the work. The ion beam 40 is irradiated by the generator 30 to the diagonally cut surface of the target 70 to implant ions and to drive out the sputtering particles so as to stick the same approximately perpendicularly to the inside wall surface of the hole of the work 50. The target 70 is rotated 62 and moved 61 by the device 60. The film is thus formed on the inside wall of the hole of the work 50 and the surface thereof is reformed.
申请公布号 JPS61170567(A) 申请公布日期 1986.08.01
申请号 JP19850010804 申请日期 1985.01.25
申请人 HITACHI LTD 发明人 ISHIMARU KAZUYUKI
分类号 C23C14/46 主分类号 C23C14/46
代理机构 代理人
主权项
地址