| 摘要 |
PURPOSE:To facilitate the control of etching speed or etching cross-sectional shape by controlling the temperature of the surface of a material to be etched by a method wherein, regarding to the titled device used to manufacture semiconductor devices, heat relaxation is controlled by irradiating the surface of the material to be etched with laser beams. CONSTITUTION:A laser photo irradiation means of irradiating the surface of an Si substrate 1 with laser beams is provided outside a chamber 4. When high-speed etching is carried out by increasing the surface temperature of the material to be etched at the etching beginning, a cross-sectional shape close to isotropy can be obtained as the top of a material 12 to be etched. When the temperature of this material is thereafter controlled to low temperature, the etching for a shape close to that of a resist mask advances 13 as the bottom of said material 12; accordingly, an etching cross-sectional shape of heat- relaxation-controlled type can be obtained. |
