发明名称 |
FORMATION OF CONDUCTIVE GRAPHITE FILM |
摘要 |
PURPOSE:To form a graphite film having excellent conductivity by forming a carbon film by plasma discharge on a substrate heated to a relatively low temp. with gaseous hydrocarbon as a raw material then subjecting the film to a heat treatment at an adequate temp. CONSTITUTION:The inside of a reaction chamber is filled with the gaseous hydrocarbon to a prescribed pressure and a high-frequency electric field is impressed thereto to induce the plasma discharge by which the carbon film is formed on a base material heated to >=700 deg.C. The base material contg. a transition metal in particular is preferable as such material acts as a catalytic material for graphitization reaction. The above-mentioned carbon film is thereafter heat-treated at >=2,000 deg.C temp. to form a conductive graphite film. The graphite film is thereafter doped with a suitable dopant, by which the conductivity is additionally improved.
|
申请公布号 |
JPS61170570(A) |
申请公布日期 |
1986.08.01 |
申请号 |
JP19850010763 |
申请日期 |
1985.01.25 |
申请人 |
AGENCY OF IND SCIENCE & TECHNOL |
发明人 |
SHIOTANI JUN;UEHA YOSHINOBU;MATSUBARA HIRONAGA |
分类号 |
C23C16/26;C23C16/27 |
主分类号 |
C23C16/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|