| 摘要 |
PURPOSE:To obtain the titled device causing no deterioration in high-frequency gain, nose index, and stability even with inexpensive plastic mold packages, by a method wherein a shield electrode is arranged between the electrode and the drain electrode in a Schottky barrier type compound semiconductor FET. CONSTITUTION:A shield electrode 6 is arranged between a gate electrode 3 and a drain electrode 5, and the feedback capacitance between the electrode 3 and 5 is reduced by e.g. grounding this shield electrode 6. In this case, it is important that the electrode 6 is so constructed so as not to act as the second gate in a so-called dual gate structure. In order not to make the shield electrode 6 act as the gate, it is preferably constructed, even in its formation by adhesion on an active layer 2 via insulation film or by using an electrode material of Schottky contact with the active layer 2, so that the pinch-off voltage Vp becomes larger than that of the gate electrode 3. |
