| 摘要 |
PURPOSE:To enable integration at low cost, and to facilitate the manufacture, by a method wherein two drain regions are arranged to one source region by sandwiching a channel-forming region; one drain region is connected to a gate electrode, and an output corresponding to the intensity of magnetic field impressed on the channel-forming region is taken out of the other drain region. CONSTITUTION:When voltage is impressed on the titled element 1, in the case of grounding a source region 5 by giving a plus potential to drain regions 7 and 8, electrons present in the channel forming region 6 of a semiconductor layer 4 are affected by magnetic field and produce a difference in current between the drain regions 7 and 8 by biasing the direction of movement. The equivalent circuit of this element 1 can be regarded as a differential amplification element made of two FETs whose sources are connected in common. Therefore, the gate electrode 9 is directly supplied with the potential impressed on the drain region 8, and the upper region of the channel-forming region 6 is provided with an N-channel; accordingly, large magnetoelectric conversion output can be obtained. This manner enables magnetoelectric conversion of stability and high accuracy and yields the element of high sensitivity. |
