| 摘要 |
PURPOSE:To make it possible to sufficiently control the thickness of alloy layer, by installing a dent on the surface of semiconductor and forming the metal electrode on the dent. CONSTITUTION:On the semiinsulative InP substrate 1, the undopped Ga0.47In0.53As layer 2 which is the photo absorbing layer is formed, on which the undopped Al0.48In0.52As layer 3 is formed. Moreover, on the layer 3, the N-type Al0.48In0.52 As layer 4 is formed. Next, the part on which the electrode is to be formed is partially removed by etching and the dent 8 is formed. Finally, the electrode 5 of AuGeNi is formed on the dent 8 and the alloy layer 6 is formed by heat treatment. |
