| 摘要 |
PURPOSE:To prevent the contraction of a pattern when ions are implanted by previously treating an org. high molecular resin at high temps., and then making a mask pattern by a multilayer resist process. CONSTITUTION:Magnetic garnet 2 is grown by liq. phase growth on a substrate 1 of gadolinium-gallium garnet (GGG), and a polyimide resin as the high molecular resin is then coated thereon to form a film having 2mum thickness by a conventional baking process. After the conventional baking process, the material is treated in N2 at the high temps. of 550 deg.C for 30min. The thickness of the polyimide resin is reduced to 1.5mum by the high-temp. treatment, and the color of the film is changed from yellow the dark brown or a blackish color. Besides, the high-temp. treatment of the polyimide resin is carried out at 400-650 deg.C in N2 or in an inert gas, at 400-500 deg.C in air, and at 400-800 deg.C in vacuum. By such treatment, the pattern is not contracted when ions are implanted.
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