| 摘要 |
PURPOSE:To improve the transmission conductance, by including the process wherein a high concentration impurity layer of reverse conductivity type to that of the semiconductor substrate is formed on the side surface of a substrate's recess groove on the front side, and the substrate layer forms by exposure to the inner surface on the bottom side. CONSTITUTION:An insulation film 15 is formed over a P-type semiconductor substrate 16, and a window 15' is formed. A rectangular groove 15' is formed through the window 15', and an N<+> impurity diffused layer 17 is formed to the inner surface. Thereafter, the groove 15' is bored deeper. Next, a gate insulation film 3 is formed, and a polycrystalline Si film is formed thereon and etched at the unnecessary part. Then, a PSG film 19 is formed from above. Further, the PSG film 19 and the oxide film are partly removed into a window 20, and As<+> and B<+> ions are implanted at the same time. As a result, an N<+> layer 5a is formed in connection with an N<+> layer 5b, and a P<+> layer 13 is formed immediately thereunder. An Al-Si alloy layer is evaporated as the source electrode 1. This construction can inhibit latch-up phenomenon by the improvement in transmission conductance. |
