| 摘要 |
PURPOSE:To simplify the process by a method wherein an amorphous hydrogenated Si photoconductive film is cut at gaps between the lower electrodes, and the upper clear electrode thereon is formed. CONSTITUTION:After Cr deposition on a glass substrate 5, the Cr is patterned into the lower electrode 1. Next, after deposition of a-Si, it is patterned into photoconductive films 2 by plasma etching with GF4 gas. At this time, they are patterned so as to coat three edges of the Cr electrode 1. Then, ITO is deposited and patterned into the upper electrode 3. This system can form the titled sensor without cross-talks by a simple process. |
