| 摘要 |
PURPOSE:To enable the etching of a superthin layer controlled on atomic- molecular level in a small amount damage, by a method wherein the substrate surface is etched by activating the etching gas previously adsorbed to the substrate surface through utilization of metastable excited molecules having a relatively long lifetime. CONSTITUTION:A valve 14 is closed after the process of etching the substrate surface first layer is finished, and the introduction of metastable molecules into a reaction chamber 7 is stopped by opening a valve 16. After this reaction chamber 7 is exhausted to vacuum again, the etching gas is leaked out of an etching gas source 8 and thus adsorbed on a substrate 6 in the chamber 7. At this step, the metastable excited molecules are exhausted via by-pass pipe 15, valve 16, and pipe 11. Successively, said etching gas remaining in the chamber 7 is exhausted; then, the metastable excited molecules is led into the chamber 7 again, and the substrate 6 is etched on activation of the etching gas which has adsorbed to the substrate 6 surface. At the step when the substrate 6 is etched to a desired thickness by repeating the above-mentioned process, the operation is stopped. |
