发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive to improve the effect of heat dissipation during chip action by a method wherein the titled device is so constructed that a thermal conduction alloy melts when the chip is heated to over a given temperature, and then connects the chip surface with the cap. CONSTITUTION:The cap 15 is recessed at the center, and its periphery is further recessed into a dam 15a. This dam 15a prevents a thermal conduction alloy 17 when heated from flowing out to the lead-out electrode formed in the chip 12. This alloy 17 is adhered to the cap 15 and arranged so as to leave a space of several 10mum between the chip 12 when it does not act and has therefore no heat. When the chip 12 starts action, the alloy 17 begins to melt and comes into contact with the chip 12 surface. Here, the alloy 17 takes fusion heat from the chip 12 and transmits the heat of the chip 12 to the cap 15 to heat dissipation. Since alloys have higher thermal conductivity than organic material, the high effect of heat dissipation is produced.
申请公布号 JPS61171153(A) 申请公布日期 1986.08.01
申请号 JP19850012152 申请日期 1985.01.25
申请人 FUJITSU LTD 发明人 HARADA SHIGEKI;HIRAYAMA TOMOJI;MURATAKE KIYOSHI
分类号 H01L23/36;H01L23/02;H01L23/04;H01L23/433 主分类号 H01L23/36
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