| 摘要 |
PURPOSE:To obtain a fine transistor having high performance by selectively growing an n<+> contact layer in an epitaxial manner so that the contact layer is made sufficiently higher than the surface of a growth layer and a side surface thereof is made approximately perpendicular, applying an insulating film onto the whole surface and conducting dry etching from the vertical direction. CONSTITUTION:An insulating film is formed in height of 0.4d or more and patterned to a gate section when height from the surface of a first semiconduc tor layer in an n<+> layer selectively grown subsequently is represented by d so as to be directed in the direction of currents 011 flowing through a FET on a 100 substrate in which the first semiconductor layer 4 and a second semi conductor layer 2 are laminated continuously onto a high resistance substrate 5 through MBE. The layers are etched up to depth in which there is the channel of a two-element electron gas. The n<+> layer is grown so that height from the surface of the first semiconductor layer reaches d, the insulating film as a mask is removed, and an insulating film is shaped onto the whole surface. The insulating film is removed left only on the side wall of the n<+> layer through an isotropic etching in the vertical direction, a metallic electrode is attached, and a metal except the 0gate section is removed. |
