| 摘要 |
PURPOSE:To prevent slide of a resinous mold layer at the time of heat load and so to be able to suppress the generation of resinous crack by a method wherein coarseness of back of a bed portion is enlarged in resin sealed type semiconductor device manifactured using a lead-frame. CONSTITUTION:At first, a metallic plate, which is made of Alloy 42 and a board thick is 0.25mm., is processed with punching work by a press metallic mold and a DIP type lead frame whose pin is extended to the both sides. Next, a back of bed portion of the lead frame is performed dry-honing and is coarsened to Rmax=10mum. If the resin sealed type semiconductor device using the above-mentioned lead frame is manufactured, it is remarkably effective that slide of resinous mold layer is prevented, thereby the generation of resinous crack is able to be suppressed. |
