| 摘要 |
PURPOSE:To enable the removal of an oxide on a surface of a silicon substrate in an MOCVD system by supplying an organic gallium compound on a surface of the silicon substrate which is retained at high temperature. CONSTITUTION:On a surface of a silicon substrate which is retained at high temperature, an organic gallium compound is supplied. An organic gallium compound, e.g., (CH3)3Ga, (trimethyl gallium; TMG) (C2H5)3Ga, or (trimethyl gallium; TEG) is thermally decomposed at high temperature to produce Ga. The TMG or TEG supplied to the surface of a silicon substrate is decomposed on the surface of a substrate or in the vicinity of the surface and becomes Ga. Ga reduces SiO2 and purification of the surface of the silicon substrate can be done. |
